Gallium nitride (GaN) is a material that can be used in the production of semiconductor power devices as well as RF components and light emitting diodes (LEDs). GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, RF, and analog applications.
Owing to the growth of Internet of Things (IoT), advent of 5G network and widespread applications across industry verticals are expected to offer immense growth opportunities to the RF GaN semiconductors market.
In 2019, the market size of GaN RF Semiconductor Devices is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of xx% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
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In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for GaN RF Semiconductor Devices.
This report studies the global market size of GaN RF Semiconductor Devices, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the GaN RF Semiconductor Devices production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.
In global market, the following companies are covered:
GAN Systems
Infineon Technologies
NXP Semiconductor
Qorvo
Wolfspeed
Ampleon
Broadcom
Efficient Power Conversion
Fujitsu Semiconductor
INTEGRA Technologies
MACOM
Northrop Grumman
NTT Advanced Technology
Texas Instruments
Market Segment by Product Type
IoT
5G
Market Segment by Application
Military and Defense
Telecom
Consumer Electronics
Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)
The study objectives are:
To analyze and research the GaN RF Semiconductor Devices status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key GaN RF Semiconductor Devices manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
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In this study, the years considered to estimate the market size of GaN RF Semiconductor Devices are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025
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